2024
Optimizing De-trap Pulses in Gate-injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue
IEEE Electron Device Letters
Giuk Kim, Hyojun Choi, Hongrae Cho, Sangho Lee, Hunbeom Shin, Hyunjun Kang, Hoon Kim, Seokjoong Shin, Seonjae Park, Sunseong Kwon, Youngjin Lim, Kang Kim, Jong Min Chung, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn, and Sanghun Jeon
2024
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal–Ferroelectric–Insulator–Si (MFIS) FeFET
IEEE Transactions on Electron Devices
Giuk Kim+ , Hyojun Choi+ ,Sangho Lee , Hunbeom Shin , Sangmok Lee , Yunseok Nam, Hyunjun Kang, Seokjoong Shin, Hoon Kim, Youngjin Lim, Kang Kim, Il-Kwon Oh , Sang-Hee Ko Park , Jinho Ahn , and Sanghun Jeon
2024
Positive Interaction Between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
IEEE Electron Device Letters
Hyojun Choi+ , Giuk Kim+ , Sangho Lee, Hunbeom Shin, Youngjin Lim, Kang Kim, Do-Hyung Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn, and Sanghun Jeon
2023
Ultra-high Tunneling Electroresistance Ratio (2×10^4) & Endurance (10^8) in Oxide Semiconductor-Hafnia Self-rectifying (1.5×10^3) Ferroelectric Tunnel Junction
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Junghyeon Hwang, Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park and Sanghun Jeon
2022
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode
IEEE ELECTRON DEVICE LETTERS
Junghoon Yang+, Yeon-Wha Oh+, Sarawut Siracosit , Hyunwoo Park, Jungmoo Lee, Sang Gyun Kim, Hanbyul Kim, Kyunghak Lee , Guk-Jin Jeon , Jae-Hyun Ahn, Sang-Hee Jung, Il-Suk Kang , and Sang-Hee Ko Park