PUBLICATION

JOURNALS

CONFERENCE

JOURNALS

2016

Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

Nanotechnology

Taeho Kim, Yunyong Nam, Ji-Hyun Hur, Sang-Hee Ko Park and Sanghun Jeon

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2016

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Journal of Information Display

Yunyong Nam, Hee-Ok Kim, Sung Haeng Cho, Chi-Sun Hwang, Taeho Kim, Sanghun Jeon and Sang-Hee Ko Park*

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2016

Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

IEEE Electron Device Letters

Jong Beom Ko, Hye In Yeom, and Sang-Hee Ko Park*

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2014

High-Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

Small

Yong-Ha Song, Sang-Joon Kenny Ahn, Min-Wu Kim, Jeong-Oen Lee, Chi-Sun Hwang, Jae-Eun Pi, Seung-Deok Ko, Kwang-Wook Choi, Sang-Hee Ko Park*, and Jun-Bo Yoon

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2014

The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

APPLIED PHYSICS LETTERS

Kyung-Chul Ok, Sang-Hee Ko Park, Chi-Sun Hwang, H. Kim, Hyun Soo Shin, Jonguk Bae, and Jin-Seong Park

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2014

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

IEEE Electron Device Letters

Chi-Sun Hwang, Sang-Hee Ko Park, Himchan Oh, Min-Ki Ryu, Kyoung-Ik Cho, and Sung-Min Yoon

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2014

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

IEEE Electron Device Letters

Bak, Jun Yong, Ryu, Min-Ki, Park, Sang-Hee Ko, Hwang, Chi Sun, Yoon, Sung Min

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2014

Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Sung Haeng Cho, Min Ki Ryu, Hee-Ok Kim, Oh-Sang Kwon, Eun-Sook Park, Yong-Suk Roh,Chi-Sun Hwang, and Sang-Hee Ko Park

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2014

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga–O Channel Layers Deposited With Different Oxygen Partial Pressures

IEEE Transactions on Electron Devices

Jun Yong Bak, Shinhyuk Yang, Ho-Jun Ryu, Sang Hee Ko Park, Chi Sun Hwang, and Sung Min Yoon

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2013

Bilayered Etch-Stop Layer of Al2O3/SiO2 for High-Mobility In–Ga–Zn–O Thin-Film Transistors

Japanese Journal of Applied Physics

Sang-Hee Ko Park, Jong Woo Kim, Min-Ki Ryu, Jae-Eun Pi, Chi-Sun Hwang, and Sung-Min Yoon

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2013

Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations

Solid State Electronics

Min-Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Sung-Min Yoon

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2013

A Transparent Logic Circuit for RFID Tag in a-IGZO TFT Technology

ETRI Journal

Byung-Do Yang, Jae-Mun Oh, Hyeong-Ju Kang, Sang-Hee Ko Park, Chi-Sun Hwang, Min Ki Ryu, and Jae-Eun Pi

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2013

A simple shift register circuit for depletion-mode oxide TFTs

Solid-State Electronics

Jae-Eun Pi, Min Ki Ryu, Chi-Sun Hwang, Sang-Hee Ko Park, Sung-Min Yoon, HongKyun Lym, YeonKyung Kim, HwanSool Oh, KeeChan Park

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2013

Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors

Journal of Vacuum Science & Technology B

Sang-Hee Ko Park, Ryu, Min-Ki, Oh, Himchan, Chi-Sun Hwang, Jeon, Jae-Hong, Sung-Min Yoon

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2013

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

NPG Asia Materials

Young Hwan Hwang, Jin-Suk Seo, Je Moon Yun, HyungJin Park, Shinhyuk Yang, Sang-Hee Ko Park and Byeong-Soo Bae

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2013

A Low-Power Single-Input Level Shifter for Oxide Thin-Film Transistors

Journal of Display Technology

Sang Yeon Kim, Joon Dong Kim, Yeon Kyung Kim, Hong Kyun Lym, Jin Tae Kim, Hwan Sool Oh, Jae Eun Pi, Min Ki Ryu, Chi Sun Hwang, Sang-Hee Ko Park, Byoung Gon Yu, and Kee Chan Park

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2012

Stability of a-InGaZnO thin film transistor under pulsed gate bias stress

Seung-Bum Seo, Jae-Hong Jeon, Han-Sung Park, Hee-Hwan Choe, Jong-Hyun Seo, Sang-Hee Ko Park

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2012

Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors

Journal of Vacuum Science & Technology B

Jun Yong Bak, Sung Min Yoon, Shinhyuk Yang, Gi Heon Kim, Sang-Hee Ko Park, , Chi-Sun Hwang

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2012

Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors

ACS Applied Materials & Interfaces

un Yong Bak, Sinhyuk Yang, Min Ki Ryu, Sang-Hee Ko Park, Chi Sun Hwang, and Sung Min Yoon

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2012

A Low-Power Scan Driver Circuit for Oxide TFTs

IEEE Electron Device Letters

Jae-Eun Pi, MinKi Ryu, Chi-Sun Hwang, ShinHyuk Yang, Sang-Hee Ko Park, Sung-Min Yoon, HongKyun Leem, YounKyung Kim, JoonDong Kim, Hwan Sool Oh, and Kee Chan Park

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PUBLICATION

Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

High-Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga–O Channel Layers Deposited With Different Oxygen Partial Pressures

Bilayered Etch-Stop Layer of Al2O3/SiO2 for High-Mobility In–Ga–Zn–O Thin-Film Transistors

Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations

A Transparent Logic Circuit for RFID Tag in a-IGZO TFT Technology

A simple shift register circuit for depletion-mode oxide TFTs

Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

A Low-Power Single-Input Level Shifter for Oxide Thin-Film Transistors

Stability of a-InGaZnO thin film transistor under pulsed gate bias stress

Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors

Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors

A Low-Power Scan Driver Circuit for Oxide TFTs

대전광역시 유성구 대학로 291 (구성동373-1) 한국과학기술원(KAIST) 4405호

Korea Advanced Institute of Science and Technology, Guseong-dong, Yuseong-gu, Daejeon,

305-701 Rep. of KOREA

TEL : +82-42-350-3356 | FAX : +82-42-350-3310

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