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JOURNALS

2010

Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)

Organic Electronics

Sung-Min Yoon, Soon-Won Jun, Shinhyuk Yang, Chunwon Byun, Chi-Sun Hwang, Sang-Hee Ko Park, Hiroshi Ishiwara

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2010

Device reliability under electrical stress and photo response of oxide TFTs

Journal of the Society for Information Display

Sang-Hee Ko Park, Min-Ki Ryu, Sung-Min Yoon, Shinhyuk Yang, Chi-Sun Hwang, Jae-Hong Jeon

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2010

Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

Advanced Functional Materials

Sung-Min Yoon, Shinhyuk Yang, Chunwon Byun, Sang-Hee Ko Park, Doo-Hee Cho, Soon-Won Jung, Oh-Sang Kwon, Chi-Sun Hwang

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2010

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics

IEEE Electron Device Letters

Kwang Hwan Ji, Ji-In Kim, Yeon-Gon Mo, Jong Han Jeong, Shinhyuk Yang, Chi-Sun Hwang, Sang-Hee Ko Park, Ryu, Myung‐Kwan, Sang-Yoon Lee, Jae Kyeong Jeong

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2010

Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy

Advanced Materials

Kimoon Lee, Min Suk Oh, Sung-jin Mun, Kwang H. Lee, Tae Woo Ha, Jae Hoon Kim, Sang-Hee Ko Park, Chi-Sun Hwang, Byoung H. Lee, Myung M. Sung, Seongil Im

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2010

Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator

IEEE Electron Devices Letters

Shinhyuk Yang, Jeong-Ik Lee, Sang-Hee Ko Park, Woo-Seok Cheong, Doo-Hee Cho, Sung-Min Yoon, Chun-Won Byun, Chi-Sun Hwang, Hye-Yong Chu, Kyoung-Ik Cho, Taek Ahn, Yoojeong Choi, Mi Hye Yi, Jin Jang

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2010

High-Performance Al-Sn-Zn-In-O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

IEEE Electron Devices Letters

Yang Shinhyuk, Cho Doo-Hee, Min Ki Ryu,; Sang-Hee Ko Park, Hwang Chi-Sun, Jin Jang, Jae Kyeong Jeong

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2010

Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

IEEE Electron Devices Letters

Yoon Sung-Min, Byun Chun-Won, Yang Shinhyuk, Sang-Hee Ko Park, Cho Doo-Hee, Jung Soon-Won, Kang Seung-Youl, Hwang Chi-Su

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2010

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

Electrochemical and Solid-State Letters

Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, and Hiroshi Ishiwara

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2010

Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Journal of The Electrochemical Society

Sung-Min Yoon, Sang-Hee Ko Park*, Chun-Won Byun, Shin-Hyuk Yang, and Chi-Sun Hwang

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2010

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Applied Physics Letters

Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang1, Gwang-Geun Lee, Eisuke Tokumitsu, and Hiroshi Ishiwara

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2010

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

Applied Physics Letters

Shinhyuk Yang, Doo-Hee Cho, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Jin Jang, and Jae Kyeong Jeong

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2010

Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Applied Physics Letters

Elvira Fortunato, Vitor Figueiredo, Pedro Barquinha, Elangovan Elamurugu, Raquel Barros, Goncalo Goncalves, Sang-Hee Ko Park, Chi-Sun Hwang, and Rodrigo Martins

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2010

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

Applied Physics Letters

Himchan Oh, Sung-Min Yoon, Min Ki Ryu, Chi-Sun Hwang, Shinhyuk Yang, and Sang-Hee Ko Park

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2010

Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

Applied Physics Letters

Elvira Fortunato, Raquel Barros, Pedro Barquinha, Vitor Figueiredo, Sang-Hee Ko Park, Chi-Sun Hwan, and Rodrigo Martins

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2010

Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application

Electrochemical and Solid-State Letters

Musarrat Hasan, Sun Jin Yun, Jae Bon Koo, Sang Hee Ko Park, Yong Hae Kim, Seung Youl Kang, Jonghyun Rho, Jee Hoon Kim, Houk Jang, Jong-Hyun Ahn, Min-Seok Jo, and Hyunsang Hwang

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2010

Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

Electrochemical and Solid-State Letters

Sung-Min Yoon, Sang-Hee Ko Park*, Shin-Hyuk Yang, Chun-Won Byun, and Chi-Sun Hwang

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2009

Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light-Emitting-Diode Display Panel

Advanced Materials

Sang-Hee K. Park, Chi-Sun Hwang, Minki Ryu, Shinhyuk Yang, Chunwon Byun, Jaeheon Shin, Jeong-Ik Lee, Kimoon Lee, Min Suk Oh, and Seongil Im

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2009

Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide

IEEE Electron Device Letters

Doo-Hee Cho, Shinhyuk Yang, Chunwon Byun, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Sung Min Yoon, and Hye-Yong Chu

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2009

Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States

Journal of the Korean Physical Society

SHIN Jae-Heon ; HWANG Chi-Sun ; CHEONG Woo-Seok ; SANG-HEE KO PARK; CHO Doo-Hee ; RYU Minki ; YOON Sung-Min ; BYUN Chun-Won ; YANG Shin-Hyuk ; HYE YONG CHU ; KYOUNG IK CHO

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PUBLICATION

Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)

Device reliability under electrical stress and photo response of oxide TFTs

Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics

Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy

Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator

High-Performance Al-Sn-Zn-In-O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application

Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light-Emitting-Diode Display Panel

Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide

Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States

대전광역시 유성구 대학로 291 (구성동373-1) 한국과학기술원(KAIST) 4405호

Korea Advanced Institute of Science and Technology, Guseong-dong, Yuseong-gu, Daejeon,

305-701 Rep. of KOREA

TEL : +82-42-350-3356 | FAX : +82-42-350-3310

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