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JOURNALS
2009
Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer
Journal of Physics D: Applied Physics
Sung-Min Yoon , Shin-Hyuk Yang , Sang-Hee Ko Park, Soon-Won Jung , Doo-Hee Cho , Chun-Won Byun , Seung-Youl Kang , Chi-Sun Hwang and Byoung-Gon Yu
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